Non-Gaussian Resistance Noise near Electrical Breakdown in Granular Materials

The distribution of resistance fluctuations of conducting thin films with granular structure near electrical breakdown is studied by numerical simulations. The film is modeled as a resistor network in a steady state determined by the competition between two biased processes, breaking and recovery. Systems of different sizes and with different levels of internal disorder are considered. Sharp deviations from a Gaussian distribution are found near breakdown and the effect increases with the degree of internal disorder. However, we show that in general this non-Gaussianity is related to the finite size of the system and vanishes in the large size limit. Nevertheless, near the critical point of the conductor-insulator transition, deviations from Gaussianity persist when the size is increased and the distribution of resistance fluctuations is well fitted by the universal Bramwell-Holdsworth-Pinton distribution.Comment: 8 pages, 6 figures; accepted for publication on Physica

Universality and Scaling Behaviour of Injected Power in Elastic Turbulence in Worm-like Micellar Gel

We study the statistical properties of spatially averaged global injected power fluctuations for Taylor-Couette flow of a worm-like micellar gel formed by surfactant CTAT. At sufficiently high Weissenberg numbers (Wi) the shear rate and hence the injected power p(t) at a constant applied stress shows large irregular fluctuations in time. The nature of the probability distribution function (pdf) of p(t) and the power-law decay of its power spectrum are very similar to that observed in recent studies of elastic turbulence for polymer solutions. Remarkably, these non-Gaussian pdfs can be well described by an universal large deviation functional form given by the Generalized Gumbel (GG) distribution observed in the context of spatially averaged global measures in diverse classes of highly correlated systems. We show by in-situ rheology and polarized light scattering experiments that in the elastic turbulent regime the flow is spatially smooth but random in time, in agreement with a recent hypothesis for elastic turbulence.Comment: 8 pages, 3 figure

A Percolative Model of Soft Breakdown in Ultrathin Oxides

The degradation of ultrathin oxide layers in the presence of a stress voltage is modeled in terms of two antagonist percolation processes taking place in a random resistor network. The resistance and leakage current fluctuations are studied by MonteCarlo simulations for voltages below the breakdown threshold. An increase of excess noise together with a noticeable non-Gaussian behavior is found in the pre-breakdown regime in agreement with experimental results.Comment: accepted for publication on Physica

The role of topology in electrical properties of bacteriorhodopsin and rat olfactory receptor I7

We report on electrical properties of the two sensing proteins: bacteriorhodopsin and rat olfactory receptor OR-I7. As relevant transport parameters we consider the small-signal impedance spectrum and the static current-voltage characteristics. Calculations are compared with available experimental results and the model predictability is tested for future perspectives.Comment: 4 pages, 4 figure

Non-Gaussian Fluctuations in Biased Resistor Networks: Size Effects versus Universal Behavior

We study the distribution of the resistance fluctuations of biased resistor networks in nonequilibrium steady states. The stationary conditions arise from the competition between two stochastic and biased processes of breaking and recovery of the elementary resistors. The fluctuations of the network resistance are calculated by Monte Carlo simulations which are performed for different values of the applied current, for networks of different size and shape and by considering different levels of intrinsic disorder. The distribution of the resistance fluctuations generally exhibits relevant deviations from Gaussianity, in particular when the current approaches the threshold of electrical breakdown. For two-dimensional systems we have shown that this non-Gaussianity is in general related to finite size effects, thus it vanishes in the thermodynamic limit, with the remarkable exception of highly disordered networks. For these systems, close to the critical point of the conductor-insulator transition, non-Gaussianity persists in the large size limit and it is well described by the universal Bramwell-Holdsworth-Pinton distribution. In particular, here we analyze the role of the shape of the network on the distribution of the resistance fluctuations. Precisely, we consider quasi-one-dimensional networks elongated along the direction of the applied current or trasversal to it. A significant anisotropy is found for the properties of the distribution. These results apply to conducting thin films or wires with granular structure stressed by high current densities.Comment: 8 pages, 4 figures. Invited talk at the 18-th International Conference on Noise and Fluctuations, 19-23 September 2005, Salamanc

Non-Gaussianity of resistance fluctuations near electrical breakdown

We study the resistance fluctuation distribution of a thin film near electrical breakdown. The film is modeled as a stationary resistor networkunder biased percolation. Depending on the value of the external current,on the system sizes and on the level of internal disorder, the fluctuation distribution can exhibit a non-Gaussian behavior. We analyze this non-Gaussianity in terms of the generalized Gumbel distribution recently introduced in the context of highly correlated systems near criticality. We find that when the average fraction of defects approaches the random percolation threshold, the resistance fluctuation distribution is well described by the universal behavior of the Bramwell-Holdsworth-Pinton distribution.Comment: 3 figures, accepted for publication on Semicond Sci Tec

Current voltage characteristics and excess noise at the trap filling transition in polyacenes

Experiments in organic semiconductors (polyacenes) evidence a strong super quadratic increase of the current-voltage (I-V) characteristic at voltages in the transition region between linear (Ohmic) and quadratic (trap free space-charge-limited-current) behaviours. Similarly, excess noise measurements at a given frequency and increasing voltages evidence a sharp peak of the relative spectral density of the current noise in concomitance with the strong super-quadratic I-V characteristics. Here we discuss the physical interpretation of these experiments in terms of an essential contribution from field assisted trapping-detrapping processes of injected carriers. To this purpose, the fraction of filled traps determined by the I-V characteristics is used to evaluate the excess noise in the trap filled transition (TFT) regime. We have found an excellent agreement between the predictions of our model and existing experimental results in tetracene and pentacene thin films of different length in the range $0.65 \div 35 \ \mu m$.Comment: 20 pg, 13 figures, in pres

Resistance and Resistance Fluctuations in Random Resistor Networks Under Biased Percolation

We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased percolations consisting of the breaking and recovering of elementary resistors. These two processes are driven by the joint effects of an electrical bias and of the heat exchange with a thermal bath. The electrical bias is set up by applying a constant voltage or, alternatively, a constant current. Monte Carlo simulations are performed to analyze the network evolution in the full range of bias values. Depending on the bias strength, electrical failure or steady state are achieved. Here we investigate the steady-state of the RRN focusing on the properties of the non-Ohmic regime. In constant voltage conditions, a scaling relation is found between $/_0$ and $V/V_0$, where $$ is the average network resistance, $_0$ the linear regime resistance and $V_0$ the threshold value for the onset of nonlinearity. A similar relation is found in constant current conditions. The relative variance of resistance fluctuations also exhibits a strong nonlinearity whose properties are investigated. The power spectral density of resistance fluctuations presents a Lorentzian spectrum and the amplitude of fluctuations shows a significant non-Gaussian behavior in the pre-breakdown region. These results compare well with electrical breakdown measurements in thin films of composites and of other conducting materials.Comment: 15 figures, 23 page